JPH0379874B2 - - Google Patents

Info

Publication number
JPH0379874B2
JPH0379874B2 JP57044814A JP4481482A JPH0379874B2 JP H0379874 B2 JPH0379874 B2 JP H0379874B2 JP 57044814 A JP57044814 A JP 57044814A JP 4481482 A JP4481482 A JP 4481482A JP H0379874 B2 JPH0379874 B2 JP H0379874B2
Authority
JP
Japan
Prior art keywords
gate
field effect
transistor
effect transistor
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57044814A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58162065A (ja
Inventor
Koji Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Priority to JP57044814A priority Critical patent/JPS58162065A/ja
Publication of JPS58162065A publication Critical patent/JPS58162065A/ja
Publication of JPH0379874B2 publication Critical patent/JPH0379874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
JP57044814A 1982-03-20 1982-03-20 ゲ−ト保護回路 Granted JPS58162065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57044814A JPS58162065A (ja) 1982-03-20 1982-03-20 ゲ−ト保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57044814A JPS58162065A (ja) 1982-03-20 1982-03-20 ゲ−ト保護回路

Publications (2)

Publication Number Publication Date
JPS58162065A JPS58162065A (ja) 1983-09-26
JPH0379874B2 true JPH0379874B2 (en]) 1991-12-20

Family

ID=12701893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57044814A Granted JPS58162065A (ja) 1982-03-20 1982-03-20 ゲ−ト保護回路

Country Status (1)

Country Link
JP (1) JPS58162065A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
JPS63157472A (ja) * 1986-12-22 1988-06-30 Matsushita Electronics Corp 入力端子保護回路
JPH061894B2 (ja) * 1987-10-31 1994-01-05 日本電気株式会社 サンプルホールド回路
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
JP4221991B2 (ja) * 2002-10-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
JPS58162065A (ja) 1983-09-26

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